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  ar c hive inf o rmati o n archive information 1 mrf897r motorola rf device data the rf line designed for 24 volt uhf largeCsignal, common emitter, classCab linear amplifier applications in industrial and commercial fm/am equipment operating in the range 800C970 mhz. ? specified 24 volt, 900 mhz characteristics output power = 30 watts minimum gain = 10.5 db @ 900 mhz, classCab minimum efficiency = 30% @ 900 mhz, 30 watts (pep) maximum intermodulation distortion C30 dbc @ 30 watts (pep) ? characterized with series equivalent largeCsignal parameters from 800 to 960 mhz ? silicon nitride passivated ? 100% tested for load mismatch stress at all phase angles with 5:1 vswr @ 26 vdc, and rated output power ? gold metalized, emitter ballasted for long life and resistance to metalC migration maximum ratings rating symbol value unit collectorCemitter voltage v ceo 30 vdc collectorCemitter voltage v ces 60 vdc emitterCbase voltage v ebo 4.0 vdc collectorCcurrent continuous i c 4.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 105 0.60 watts w/ c storage temperature range t stg C65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.67 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorCemitter breakdown voltage (i c = 50 madc, i b = 0) v (br)ceo 30 33 vdc collectorCemitter breakdown voltage (i c = 50 madc, v be = 0) v (br)ces 60 80 vdc emitterCbase breakdown voltage (i e = 5 madc, i c = 0) v (br)ebo 4.0 4.7 vdc collector cutoff current (v ce = 30 vdc, v be = 0, t c = 25 c) i ces 10.0 madc on characteristics dc current gain (i ce = 1.0 adc, v ce = 5 vdc) h fe 30 80 120 dynamic characteristics output capacitance (v cb = 24 vdc, i e = 0, f = 1.0 mhz) c ob 14 21 28 pf (continued) order this document by mrf897r/d semiconductor technical data 30 w, 900 mhz rf power transistor npn silicon case 395eC01, style 1 ? motorola, inc. 1998 rev 2
ar c hive inf o rmati o n archive information mrf897r 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional characteristics commonCemitter amplifier power gain (v cc = 24 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz) g pe 10.5 12.0 db collector efficiency (v cc = 24 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz) 30 38 % intermodulation distortion (v cc = 24 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz) imd C37 C30 dbc output mismatch stress (v cc = 26 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz, load vswr = 5:1 (all phase angles)) no degradation in output power figure 1. 840C900 mhz test circuit schematic b1, b2, b3, b4 short ferrite bead, fair rite #2743019447 c1 0.8C8.0 pf var capacitor, johansen gigatrim c2, c3, c23, c24 43 pf, 100 mil, atc chip capacitor c4, c5, c21, c22 1000 pf, 100 mil, atc chip capacitor c6, c7, c11, c12 10 f, electrolytic capacitor, panasonic c8, c9, c16, c17 100 pf, 100 mil, atc chip capacitor c10 9.1 pf, 50 mil, atc chip capacitor c13 250 f electrolytic capacitor, mallory c14, c18, c19, c25 0.1 f, chip capacitor, kemet c15 1.1 pf, 50 mil, atc chip capacitor c20 6.8 pf, 100 mil, atc chip capacitor l1, l2, l3, l4, l5, l6, l7, l8 5 turns 20 awg, idia 0.126 choke, taylor spring 46 nh n1, n2 type n flange mount, omni spectra 3052C1648C10 q1 bias transistor bd136 pnp r1, r12 27 ohm, 2.0 w r3, r4, r5, r6 4.0 x 39 ohm, 1/8 w, chips resistors in r3, r4, r5, r6 parallel, rohm 390Cj sb1 0.15 x 0.3 x 0.03 cu tl1Ctl11 microstrip line, see photomaster balun1, balun2, coax 1, coax 2 2.20 50 ohm, 0.086 o.d. balun1, balun2, coax 1, coax 2 semiCrigid coax, micro coax balun1, balun2, coax 1, coax 2 utC85Cm17 circuit board 1/32 glass teflon, arlon gxC0300C55C22, circuit board r = 2.55
ar c hive inf o rmati o n archive information 3 mrf897r motorola rf device data figure 2. output power versus input power figure 3. output power versus frequency figure 4. output power versus supply voltage figure 5. intermodulation versus output power figure 6. power gain versus output power figure 7. broadband test fixture performance
ar c hive inf o rmati o n archive information mrf897r 4 motorola rf device data figure 8. series equivalent input/output impedances note: z in & z ol * are given from baseCtoCbase and collectorCtoCcollector respectively.     
  
figure 9. mrf897r photomaster (reduced 18% in printed data book, dl110/d)
ar c hive inf o rmati o n archive information 5 mrf897r motorola rf device data figure 10. 840C900 mhz test circuit component layout ?? ?? ?? ?? ? ? ? ? ?? ?? ?? ?? mrf897r
mrf897r 6 motorola rf device data notes
7 mrf897r motorola rf device data notes
mrf897r 8 motorola rf device data package dimensions case 395eC01 issue o                     CtC CaC CbC  u  ! k d g " n #  q 2 pl c e h j motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa/europe/locations not listed : motorola literature distribution; japan : motorola japan ltd.; spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1 C800C441C2447 4C32C1 nishiCgotanda, shinagawaCku, tokyo, japan. 81C3C 5487C8488 customer focus center: 1C800C521C6274 mfax ? : rmfax0@email.sps.mot.com C to uchtone 1C602C244C6609 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, motorola fax back system C us & canada only 1C800C774C1848 2, dai king street, tai po industrial estate, tai po, n.t., hong kong. C http://sps.motorola.com/mfax/ 852C26629298 home page : http://motorola.com/sps/ mrf897r/d ?


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